Publications
Journals Articles:
(* Equally contribution authors)
1. B. Shi*, H. Zhao*, L. Wang, B. Song, S. T. Suran Brunelli and J. Klamkin “Continuous-wave room temperature electrically pumped 1550 nm laser diodes epitaxially grown on on-axis (001) silicon,” Optica, 2019, accepted.
2. H. Zhao*, R. Zhang*, H. T. Chorsi*, W. Britton, Y. Chen, P. P. Iyer, J. A. Schuller, L.Dal Negro and J. Klamkin “Gate-tunable metasurfaces with indium silicon oxide,” Nanophotonics, vol. 8, no. 10, 2019.
3. H. Zhao, S. Pinna, F. Sang, B. Song, S. T. Suran Brunelli, L. Coldren and J. Klamkin,“High power indium phosphide photonic integrated circuits,” IEEE Journal of Selected Topics in Quantum Electronics, vol. 24, no. 6, 2019. (Invited paper)
4. H. Zhao, S. Pinna, B. Song, L. Megalini, S. T. Suran Brunelli, L. Coldren and J. Klamkin, “Indium phosphide photonic integrated circuits for free space optical links,” IEEE Journal of Selected Topics in Quantum Electronics, vol. 24, no. 6,2018.
5. H. Zhao*, Y. Wang*, A. Capretti, L. Dal Negro and J. Klamkin,“Broadband elec-troabsorption modulators design based on epsilon-near-zero indium tin oxide,” IEEE Journal of Selected Topics on Quantum Electronics, vol. 21, no. 4, 2015.
6. H. Zhao, W. Hu, C. Xue, B. Cheng and Q. Wang, “Design of waveguide integratedGe-quantum-well electro-absorption modulators,” Chinese Physics Letter, vol. 28, no. 1, 2011.
7. B. Shi, L. Wang, A. Taylor, S. T. Suran Brunell, H. Zhao, B. Song and J. Klamkin,“MOCVD grown low dislocation density GaAs-on-V-groove patterned (001) Si for 1.3μm quantum dot laser applications,” Applied Physics Letter, Vol. 114, no. 17, 2019.
8. L. Megalini, B. Cabinian, H. Zhao, D. Oakley, J. E. Bowers and J. Klamkin, “Large-area direct hetero-epitaxial growth of 1550-nm InGaAsP multi-quantum-well structures on patterned exact-oriented (001) silicon substrates by MOCVD,” Journal of Electronics Materials, vol. 47, no. 2, pp. 982-987, 2018.
9. L. Megalini, B. Cabinian, B. Bonef, H. Zhao, T. Mates, J. Speck, J. E. Bowers and J. Klamkin, “1.55 μm emitting InGaAsP multi-quantum-well p-i-n structures selectively grown on V-grooved SOI substrates by MOCVD”, Applied Physics Letter, vol. 111, no. 3, 2017.
Presentations:
1. H. Zhao, R. Zhang, H. T. Chorsi, W. Britton, Y. Chen, P. P. Iyer, J. A. Schuller, L.Dal Negro and J. Klamkin “Tunable metasurface based on silicon doped indium oxide,” Advanced Photonics 2019 (IPR, NOMA, Sensors, Networks, SPPCom, SOF), paper NoTh3B.6.
2. H. Zhao, S. Pinna, B. Song, S. T. Suran Brunelli, B.Isaac, F. Sang, L. Coldren and J. Klamkin, “Widely tunable integrated laser transmitter for free space communications,” International Semiconductor Laser Conference (ISLC) 2018, paper MC.5.
3. H. Zhao, S. Pinna, B. Song, L. Megalini, S. T. Suran Brunelli, L. Coldren and J. Klamkin, “High-power integrated indium phosphide transmitter for free space communications,” Conference on Lasers and Electro-Optics (CLEO) 2018, paper JW2A.52.
4. H. Zhao, S. Pinna, B. Song, L. Megalini, S. T. Suran Brunelli, L. Coldren and J. Klamkin, “Integrated indium phosphide transmitter for free space optical link,” Advanced Photonics 2018 (IPR, NOMA, Sensors, Networks, SPPCom, SOF), paper ITu4B.6.
5. H. Zhao, Y. Wang, A. Capretti, L. Dal Negro and J. Klamkin, “Silicon photonicmodulators based on epsilon-near-zero indium tin oxide materials,”IEEE Photonic Conference 2014 (IPC), paper TuH3.3.
6. H. Zhao, P. Contu and J. Klamkin,“ Silicon nanophotonic waveguide modulatorwith graphene active medium,”Advanced Photonics 2014 (IPR, NOMA, Sensors, Networks, SPPCom, SOF), paper JM3B.4.
7. H. Zhao, W. Hu, C. Xue, B. Cheng and Q. Wang, “UHVCVD growth of Ge/SiGe multiple quantum wells for electra-absorption,”IEEE Conference on Group IV Photonics 2011, pp. 311-313.
8. B. Shi, H. Zhao, L. Wang, B. Song, S. T. Suran Brunelli and J. Klamkin “Room temperature continuous wave electrically pumped 1.55 μm quantum well lasers epitaxially grown on (001) Si,” Asia Communications and Photonics Conference, paper S3H.5.
9. V. Rosborough, F. Sang, J. Fridlander, H. Zhao, B. Song, S. T. Suran Brunelli, L. Coldren and J. Klamkin, “Monolithic integration of widely-tinable DBR and DFB lasers with one-step grating formation,” Advanced Photonics 2019 (IPR, NOMA, Sensors, Networks, SPPCom, SOF).
10. F. Gambini, Y. Liu, B. Song, H. Zhao, V. Rosborough, F. Sang, P. Velha, S. Faralli and J. Klamkin, “Ultra-compact Bragg-assisted silicon photonics orbital angular momentum emitter,” Advanced Photonics 2019 (IPR, NOMA, Sensors, Networks, SPPCom, SOF), paper ITh3C. 4.
11. J. Klamkin, L. Wang, B. Shi, S. T. Suran Brunelli, H. Zhao, and B. Song, ”Laser Integration Technologies for Silicon Photonics,” OSA Advanced Photonics Congress 2019 (IPR, Networks, NOMA, SPPCom, PVLED), paper ITh1A.1.
12. L. Wang, B. Shi, H. Zhao, S. T. Suran Brunelli, B. Song, D. Oakley and J. Klamkin, “Toward all MOCVD grown InAs/GaAs quantum dot laser on CMOS-compatible (001) silicon ,” Conference on Lasers and Electro-Optics (CLEO) 2019, paper JTu2A.82.
13. L. Megalini, S. T. Suran Brunelli, B. Bonef, H. Zhao, A. Taylor, K. Mukherjee, J. S. Speck, J. E. Bowers and J. Klamkin, “Toward edge-emitting 1550-nm InGaAsP laser diodes grown on (001) Si and SOI substrates by MOCVD,” SPIE Photonics West 2018, paper 10553-2.
14. L. Megalini, B. Cabinian, B. Bonef, H. Zhao, T. Mates, J. Speck, J. E. Bowers and J. Klamkin, “High quality 1.55 μm emitting InGaAsP multi-quantum-well inside InP nano-ridges selectively grown in V-grooved SOI substrates by MOCVD,” Advanced Photonics 2017 (IPR, NOMA, Sensors, Networks, SPPCom, SOF), paper ITu2A.3.
15. L. Megalini, B. Cabinian, H. Zhao, D. Oakley, J. E. Bowers and J. Klamkin, “Toward fully monolithic 1550-nm lasers on silicon by direct hetero-epitaxy growth on patterned substrates,” Conference on Lasers and Electro-Optics (CLEO) 2017, paper AM4A.6 .
16. Wang, K. Kojima, K. Koike-Akino, H. Zhao and J. Klamkin, “Design of InP chip output coupler with transformation optics,” IEEE Photonic Conference 2016, paper IW3B.5.